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| (R) BUL49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS 2 3 APPLICATIONS s ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL49D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The BUL49D is designed for use in electronic transformers for halogen lamps. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B < 2.5 A, tp < 10s, T J < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 850 450 BV EBO 5 10 2 4 80 -65 to 150 150 Uni t V V V A A A A W o o C C June 2000 1/6 BUL49D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO BV EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Test Cond ition s V CE = 850 V V CE = 850 V V EB = 9 V I E = 10mA 10 T j = 125 C o Min. Typ . Max. 100 500 100 18 Un it A A A V V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = 10 mA L = 25 mH 450 V IC = 1 A IC = 2 A IC = 4 A IC = 1 A IC = 4 A I C = 10 mA I C = 0.5 A IC = 7 A IC = 8 A V BB = -2.5 V t p = 10 s I B = 0.2 A I B = 0.4 A I B = 0.8 A I B = 0.2 A I B = 0.8 A V CE = 5 V V CE = 5 V V CE = 10 V R BB = 0 L = 50H 10 4 450 0.1 0.3 0.6 1.2 1.0 1.3 60 10 V V V V V V BE(s at) h FE V CEW Maximum Collector Emitter Voltage Without Snubber RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Diode Forward Voltage V ts tf ts tf Vf IC = 2 A VCC = 250 V I B(o n) = I B(of f) = 0.4 A IC = 4 A V BE(of f) = -5 V V CL = 300 V IC = 3 A IB(on ) = 0.8 A R BB = 0 L = 1 mH 2 3 0.8 0.6 50 1.3 100 1.5 s s s ns V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 BUL49D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 BUL49D Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/6 BUL49D TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BUL49D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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